2SD2495P

更新时间： 2025-07-22 13:04:23

品牌	Logo	应用领域
三垦 - SANKEN		晶体稳压器晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
1页	27K
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中文翻译

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数据手册

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2SD2495P 数据手册

Equivalent circuit

Darlington 2 S D2 4 9 5

(70Ω)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626)

Absolute maximum ratings (Ta=25°C) Electrical Characteristics

Application : Audio, Series Regulator and General Purpose

External Dimensions FM20(TO220F)

■

(Ta=25°C)

Symbol

2SD2495

Symbol

Conditions

2SD2495

100max

110min

5000min

2.5max

3.0max

60typ

Unit

µA

Unit

±0.2

4.2

±0.2

10.1

0.5

I^CBO

V^CBO

VCEO

VEBO

110

V^CB=110V

2.8

IEBO

110

V^EB=5V

V(BR)CEO

hFE

I^C=30mA

±0.2

ø3.3

V^CE=4V, IC=5A

I^C=5A, IB=5mA

V^CE=12V, IE=–0.5A

V^CB=10V, f=1MHz

VCE(sat)

VBE(sat)

30(Tc=25°C)

150

°C

MHz

±0.15

1.35

COB

55typ

Tstg

±0.15

1.35

–55 to +150

+0.2

-0.1

0.85

2.54

+0.2

-0.1

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

■Typical Switching Characteristics (Common Emitter)

0.45

±0.2

2.4

2.54

±0.2

2.2

Weight : Approx 2.0g

a. Type No.

b. Lot No.

V^CC

(V)

R^L

I^C

VBB1

V^BB2

(V)

I^B1

I^B2

ton

tstg

(Ω)

(A)

(V)

(mA)

(µs)

C E

–5

0.8typ

6.2typ

1.1typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

IC=5A

IC=3A

I^B=0.1mA

0.1

0.5

50 100

2.5

Collector-Emitter Voltage V^CE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

40000

Typ

10000

5000

125˚C

25˚C

10000

5000

1000

500

1000

500

–30˚C

0.5

0.3

200

0.02

100

0.02

50 100

Time t(ms)

500 1000

0.1

0.5

5 6

0.1

0.5

5 6

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

Typ

0.5

Without Heatsink

Natural Cooling

0.1

Without Heatsink

0.05

–0.02

–0.1

–1

–6

100

200

100

125

150

Collector-Emitter Voltage VCE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

155

中文翻译

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与2SD2495P相关器件

型号	品牌	获取价格	描述	数据表
2SD2495Y	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2495Y	ISC	获取价格	Transistor
2SD2495_15	JMNIC	获取价格	Silicon NPN Darlington Power Transistors
2SD2495_2015	JMNIC	获取价格	Silicon NPN Darlington Power Transistors
2SD2496	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD2497	ETC	获取价格
2SD2497RF	HITACHI	获取价格	5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SD2498	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, C
2SD2498	Wing Shing	获取价格	Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
2SD2498	SAVANTIC	获取价格	Silicon NPN Power Transistors

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