Datasheet > 2SD2510Q

2SD2510Q

更新时间： 2023-12-06 20:11:25

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	849K
描述
功率三极管

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数据手册

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2SD2510Q 数据手册

2SD2510Q-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• High power dissipation

• High gain

• Low saturation voltage

• Halogen and Antimony Free(HAF), RoHS compliant

Applictions

• Motor drive

1.Base 2.Collector 3.Emitter 4.Collector

SOT-223 Plastic Package

• DC-DC converters

• PSU start up circuit

• Relay, lamp and solenoid drive

Absolute Maximum Ratings (T_a= 25

Parameter

unless otherwise specified)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

180

100

Base Current

I_B

1.6

Power Dissipation ¹⁾

Power Dissipation

P_D

7.3

T_C= 25

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

Thermal Resistance from Junction to Ambient ¹⁾

Thermal Resistance from Junction to Case

R_θJC

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 5

Dated: 11/08/2023 Rev:02

12 3 4 5

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