Datasheet > 2SD246P

2SD246P

更新时间： 2024-11-16 18:48:35

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	174K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SD246P 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SD246P 数据手册

Power Transistors

2SD2469, 2SD2469A

Silicon NPN epitaxial planar type

For power switching

Complementary to 2SB1607

Unit: mm

Features

4.6±0.2

■

●

Low collector to emitter saturation voltage V_CE(sat)

Satisfactory linearity of foward current transfer ratio h_FE

9.9±0.3

2.9±0.2

φ3.2±0.1

●

Large collector current I_C

●

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

2.6±0.1

0.7±0.1

1.2±0.15

Absolute Maximum Ratings (T =25˚C)

■

1.45±0.15

Parameter

Symbol

Ratings

Unit

0.75±0.1

Collector to

2SD2469

2SD2469A

2SD2469

130

V_CBO

2.54±0.2

5.08±0.4

base voltage

Collector to

150

V_CEO

2 3

7°

emitter voltage 2SD2469A

Emitter to base voltage

Peak collector current

Collector current

100

V_EBO

I_CP

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

I_C

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 100V, I_E= 0

I_EBO

V_CEO

h_FE1

V_EB= 5V, I_C= 0

µA

Collector to emitter 2SD2469

100

I_C= 10mA, I_B= 0

voltage

2SD2469A

V_CE= 2V, I_C= 0.1A

V_CE= 2V, I_C= 3A

I_C= 5A, I_B= 0.25A

Forward current transfer ratio

h_FE2

260

0.5

1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 5A, I_B= 0.25A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 10MHz

0.5

1.5

0.1

MHz

µs

I_C= 3A, I_B1= 0.3A, I_B2= – 0.3A,

V_CC= 50V

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

12 3 4

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