Datasheet > 2SD2463L

2SD2463L

更新时间： 2024-09-28 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	84K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 31V V(BR)CEO \| 2A I(C) \| SIP

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数据手册

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2SD2463L 数据手册

DATA SHEET

SILICON TRANSISTOR

2SD2463

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SD2463 is a Darlington connection transistor with on-

chip dumper diode in collector to emitter and zener diode in

collector to base. This transistor is ideal for use in acuator

drives such as motors, relays, and solenoids.

FEATURES

• Cost reduction available due to on-chip dumper diode (C to

E) and zener diode ( C to B)

• Low collector saturation voltage

• Insulation type package supportable for radial taping

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the

devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

I^B(DC)

P^T

Conditions

Ratings

31 4

8.0

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

2.0

T^C= 25°C

PW ≤ 10 ms, Duty cycle ≤ 50%, T^C= 25°C

3.0

0.2

1.0

Total power dissipation

Junction temperature

Storage temperature

°C

T^C= 25°C

P^T

6.0

T^j

150

−55 to +150

T^stg

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16158EJ1V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

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与2SD2463L相关器件

型号	品牌	获取价格	描述	数据表
2SD2463-L	NEC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon
2SD2463-L	RENESAS	获取价格	2000mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2463M	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 31V V(BR)CEO \| 2A I(C) \| SIP
2SD2463-M	NEC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon
2SD2463-M	RENESAS	获取价格	2000mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2464	PANASONIC	获取价格	Small Signal Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SD2465	PANASONIC	获取价格	Silicon NPN epitaxial planar type(For low-voltage switching)
2SD2465A	PANASONIC	获取价格	Silicon NPN epitaxial planar type
2SD2465AP	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2465AQ	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3