Datasheet > 2SD2465AQ

2SD2465AQ

更新时间： 2024-09-30 08:18:03

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	171K
描述
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220E, FULL PACK-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2465AQ 数据手册

Power Transistors

2SD2465, 2SD2465A

Silicon NPN epitaxial planar type

For low-voltage switching

Complementary to 2SB1603

Unit: mm

Features

■

4.6±0.2

●

Low collector to emitter saturation voltage V_CE(sat)

High-speed switching

9.9±0.3

2.9±0.2

φ3.2±0.1

●

Full-pack package superior in insulation, which can be installed

to the heat sink with one screw

Absolute Maximum Ratings (T =25˚C)

■

2.6±0.1

0.7±0.1

1.2±0.15

Parameter

Symbol

Ratings

Unit

1.45±0.15

Collector to

2SD2465

2SD2465A

2SD2465

V_CBO

0.75±0.1

base voltage

Collector to

2.54±0.2

5.08±0.4

V_CEO

emitter voltage 2SD2465A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

2 3

7°

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

I_C

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

2SD2465

V_CB= 40V, I_E= 0

current

2SD2465A

V_CB= 50V, I_E= 0

V_EB= 5V, I_C= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

Collector to emitter 2SD2465

voltage 2SD2465A

I_C= 10mA, I_B= 0

V_CE= 2V, I_C= 0.1A

V_CE= 2V, I_C= 1A

I_C= 2A, I_B= 0.1A

Forward current transfer ratio

h_FE2

260

0.5

1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

_C= 2A, I_B= 0.1A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 5V, I_C= 0.5A, f = 10MHz

120

0.2

0.5

0.1

MHz

µs

I_C= 2A, I_B1= 0.2A, I_B2= – 0.2A,

V_CC= 20V

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

12 3 4

中文翻译

下载PDF

与2SD2465AQ相关器件

型号	品牌	获取价格	描述	数据表
2SD2465P	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2465Q	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2466	PANASONIC	获取价格	Silicon NPN epitaxial planar type(For low-voltage switching)
2SD2466A	PANASONIC	获取价格	Silicon NPN epitaxial planar type(For low-voltage switching)
2SD2466AP	PANASONIC	获取价格	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2466AQ	PANASONIC	获取价格	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2466P	PANASONIC	获取价格	Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2466Q	PANASONIC	获取价格	暂无描述
2SD2467	PANASONIC	获取价格	Silicon NPN epitaxial planar type(For power switching)
2SD2467P	PANASONIC	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3