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2SD2394E PDF预览

2SD2394E

更新时间: 2024-01-27 14:45:48
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
1页 56K
描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR

2SD2394E 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:NBase Number Matches:1

2SD2394E 数据手册

  
2SD2394  
Transistors  
Power Transistor (60V, 3A)  
2SD2394  
!Features  
!External dimensions (Units : mm)  
1) Low saturation voltage.  
C
(Typ. V  
CE(sat) =  
0.3V at I / I 2A / 0.2A)  
B =  
10.0  
4.5  
2.8  
3.2  
φ
2) Excellent DC current gain characteristics.  
3) Wide SOA (safe operating area).  
1.2  
1.3  
0.8  
0.75  
( )  
(1) Base Gate  
2.54  
2.54  
)
2.6  
(
) (  
)
(
2
3
1
(
)
)
(2) Collector Drain  
(
(
) ( )  
( )  
2
3
1
(3) Emitter Source  
ROHM : TO-220FN  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
80  
60  
V
V
7
V
I
C
3
A(DC)  
A(Pulse)  
W
Collector current  
I
CP  
6
2
25  
Collector power dissipation  
PC  
W(Tc  
=
25°C)  
Junction temperature  
Storage temperature  
Single pulse, Pw=100ms  
Tj  
150  
°C  
°C  
Tstg  
55 ∼ +150  
!Packaging specifications and hFE  
Type  
2SD2394  
Package  
TO-220FN  
EF  
hFE  
Code  
Basic ordering unit (pieces)  
500  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
80  
60  
7
10  
10  
1
V
V
I
I
I
C
C
E
= 50µA  
= 1mA  
= 50µA  
CB = 60V  
EB = 7V  
V
I
CBO  
100  
µA  
µA  
V
V
V
Emitter cutoff current  
I
EBO  
VCE(sat)  
VCE(sat)  
VBE(sat)  
Collector-emitter saturation voltage  
I
I
C/I  
B
= 2A/0.2A  
= 2A/0.2A  
0.8  
1.5  
V
Base-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
V
C/I  
B
hFE  
320  
MHz  
pF  
V
CE/I  
CE = 5V , I  
CB = 10V , I  
C
= 5V/0.5A  
= −0.5A , f = 5MHz  
= 0A , f = 1MHz  
8
V
E
f
Cob  
T
35  
Output capacitance  
V
E
Measured using pulse current.  

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