Datasheet > 2SD2324

2SD2324

更新时间： 2024-01-18 22:48:26

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	39K
描述
NPN Epitaxial Planar Silicon Transistor

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中文翻译

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数据手册

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2SD2324 数据手册

SMD Type

TransistIoCrs

NPN Epitaxial Planar Silicon Transistor

2SD2324

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low saturation voltage.

Contains a diode between colletor and emitter.

Contains a bias resistor between base and emitter.

Large current capacity.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

Small-sized package facilitating the realization of

high-density, small-sized hybrid ICs.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage, With Zener diode (11 3V)

Collector-emitter voltage, With Zener diode (11 3V)

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

0.8

Collector current (pulse)

I^CP

Collector dissipation

P^C

200

Jumction temperature

T^j

150

Storage temperature

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

ìA

Collector cutoff current

Ic^BO

h^FE

f^T

VCB = 15V , IE = 0

1.0

DC current Gain

VCE = 2V , IC = 0.5A

VCB = 10V , f = 1MHz

Gain bandwidth product

Output capacitance

150

MHz

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-to-base breakdown voltage

V^CE(sat)IC = 500mA , IB = 10mA

V^BE(sat)IC = 500mA , IB = 10mA

V^(BR)CBOIC = 10ìA , IE = 0

I^C= 10ìA , RBE =

0.16

0.85

0.3

1.2

Collector-to-emitter breakdown voltage

IC = 10mA , RBE =

IF = 0.5A

V^(BR)CEO

Diode forward voltage

Base-emitter resistance

V^F

1.5

R^BE

kÙ

Marking

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