Datasheet > 2SD2331

2SD2331

更新时间： 2024-02-25 19:30:58

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	75K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD2331 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD2331

DESCRIPTION

·With TO-3PFa package

·High voltage;high speed

·Built-in damper diode

APPLICATIONS

·For color TV horizontal output applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1500

600

UNIT

Open base

3.5

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-55~150

T_j

T_stg

12 3

中文翻译

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2SD2335	PANASONIC	获取价格	TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)
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