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2SD2322S/Q PDF预览

2SD2322S/Q

更新时间: 2024-02-04 21:23:33
品牌 Logo 应用领域
罗姆 - ROHM 晶体管
页数 文件大小 规格书
2页 105K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon

2SD2322S/Q 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2SD2322S/Q 数据手册

 浏览型号2SD2322S/Q的Datasheet PDF文件第2页 

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