Datasheet > 2SD2324

2SD2324

更新时间： 2024-01-21 11:53:55

品牌	Logo	应用领域
TYSEMI		晶体二极管晶体管开关光电二极管
页数	文件大小	规格书
1页	69K
描述
Low saturation voltage. Contains a diode between colletor and emitter.

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数据手册

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2SD2324 数据手册

SSSMMMDDD TTTyyypppeee

TTrraannssiissttIooCrrss

Product specification

2SD2324

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low saturation voltage.

Contains a diode between colletor and emitter.

Contains a bias resistor between base and emitter.

Large current capacity.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

Small-sized package facilitating the realization of

high-density, small-sized hybrid ICs.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage, With Zener diode (11 3V)

Collector-emitter voltage, With Zener diode (11 3V)

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

0.8

Collector current (pulse)

I^CP

Collector dissipation

P^C

200

Jumction temperature

T^j

150

Storage temperature

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

1.0

Unit

ìA

Collector cutoff current

Ic^BO

h^FE

f^T

V^CB= 15V , I^E= 0

DC current Gain

V^CE= 2V , I^C= 0.5A

V^CB= 10V , f = 1MHz

Gain bandwidth product

Output capacitance

150

MHz

C^ob

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-to-base breakdown voltage

V^CE(sat)I^C= 500mA , I^B= 10mA

V^BE(sat)I^C= 500mA , I^B= 10mA

V^(BR)CBOI^C= 10ìA , I^E= 0

I^C= 10ìA , R^BE=

0.16

0.85

0.3

1.2

Collector-to-emitter breakdown voltage

I^C= 10mA , R^BE=

I^F= 0.5A

V(BR)CEO

Diode forward voltage

Base-emitter resistance

V^F

1.5

R^BE

kÙ

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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