Datasheet > 2SD2321Q

2SD2321Q

更新时间： 2024-02-14 19:08:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	52K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 5A I(C) \| SC-72

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中文翻译

获取价格

数据手册

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2SD2321Q 数据手册

Transistor

2SD2321

Silicon NPN epitaxial planer type

For low-frequency power amplification

Unit: mm

4.0±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Satisfactory operation performances at high efficiency with the

low-voltage power supply.

marking

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1.27 1.27

2.54±0.15

1:Emitter

2:Collector

3:Base

EIAJ:SC–72

New S Type Package

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I_CP

400

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

V_CB= 10V, I_E= 0

_CE= 10V, I_B= 0

Collector cutoff current

I_CEO

1.0

Emitter cutoff current

I_EBO

V_EB= 7V, I_C= 0

0.1

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

V_CE= 2V, I_C= 0.5A^*2

V_CE= 2V, I_C= 2A^*2

I_C= 3A, I_B= 0.1A^*2

h_FE1

h_FE2

230

150

600

1.0

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

0.28

150

MHz

Transition frequency

f_T

V_CB= 6V, I_E= –50mA, f = 200MHz

V_CB= 20V, I_E= 0, f = 1MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

230 ~ 380

340 ~ 600

12 3

中文翻译

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