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2SD2312C1W PDF预览

2SD2312C1W

更新时间: 2023-02-26 13:30:48
品牌 Logo 应用领域
罗姆 - ROHM 晶体管
页数 文件大小 规格书
2页 81K
描述
150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD2312C1W 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):1200
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON

2SD2312C1W 数据手册

 浏览型号2SD2312C1W的Datasheet PDF文件第2页 

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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD2313MC2 ROHM

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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon