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2SD2306T114K PDF预览

2SD2306T114K

更新时间: 2024-02-28 10:47:42
品牌 Logo 应用领域
罗姆 - ROHM 晶体管
页数 文件大小 规格书
2页 101K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

2SD2306T114K 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.77最大集电极电流 (IC):4 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):1000JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

2SD2306T114K 数据手册

 浏览型号2SD2306T114K的Datasheet PDF文件第2页 

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