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2SD2158 PDF预览

2SD2158

更新时间： 2024-09-25 23:20:31
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2SD2158 数据手册

 浏览型号2SD2158的Datasheet PDF文件第2页浏览型号2SD2158的Datasheet PDF文件第3页 
Power Transistors  
2SD2158, 2SD2158A  
Silicon NPN triple diffusion planar type  
For power amplification with high forward current transfer ratio  
Unit: mm  
Features  
High foward current transfer ratio hFE  
Satisfactory linearity of foward current transfer ratio hFE  
■
●
10.0±0.2  
5.5±0.2  
4.2±0.2  
●
2.7±0.2  
●
Full-pack package which can be installed to the heat sink with  
one screw  
φ3.1±0.1  
Absolute Maximum Ratings (T =25˚C)  
■
C
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SD2158  
2SD2158A  
2SD2158  
80  
1.3±0.2  
1.4±0.1  
VCBO  
V
base voltage  
Collector to  
100  
+0.2  
–0.1  
0.5  
60  
0.8±0.1  
VCEO  
V
emitter voltage 2SD2158A  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
2.54±0.25  
VEBO  
ICP  
IC  
6
V
A
A
A
5.08±0.5  
4
1
2
3
2
1:Base  
2:Collector  
3:Emitter  
TO–220 Full Pack Package(a)  
Base current  
IB  
0.5  
Collector power TC=25°C  
20  
PC  
W
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
■
C
Parameter  
Collector cutoff  
current  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
100  
100  
100  
Unit  
2SD2158  
VCB = 80V, IE = 0  
VCB = 100V, IE = 0  
CE = 40V, IB = 0  
µA  
2SD2158A  
Collector cutoff current  
Emitter cutoff current  
ICEO  
IEBO  
V
µA  
µA  
VEB = 6V, IC = 0  
Collector to emitter 2SD2158  
60  
80  
VCEO  
IC = 25mA, IB = 0  
V
voltage  
2SD2158A  
*
Forward current transfer ratio  
hFE  
VCE = 4V, IC = 300mA  
IC = 1A, IB = 25mA  
500  
2500  
1
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
V
V
IC = 1A, IB = 25mA  
1.2  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
VCE = 12V, IC = 200mA, f = 10MHz  
VCB = 10V, IE = 0, f = 1MHz  
40  
30  
0.6  
2.5  
1
MHz  
pF  
µs  
Cob  
ton  
tstg  
tf  
IC = 1A, IB1 = 25mA, IB2 = –25mA,  
VCC = 50V  
Storage time  
µs  
Fall time  
µs  
*hFE Rank classification  
Rank  
hFE  
Q
P
O
500 to 1000 800 to 1500 1200 to 2500  
1
123

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与2SD2158相关器件

型号 品牌 获取价格 描述 数据表
2SD2158A ETC

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 		TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-186
2SD2158AO PANASONIC

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 		Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2158AP PANASONIC

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 		Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2158AQ PANASONIC

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 		Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2158O PANASONIC

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 		Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2158P PANASONIC

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 		Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2158Q PANASONIC

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 		Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2159 ROHM

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 		1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD2159 FOSHAN

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 		TO-92LM
2SD2159/E ROHM

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 		Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO

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