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2SD2158O PDF预览

2SD2158O

更新时间: 2024-09-26 20:17:39
品牌 Logo 应用领域
松下 - PANASONIC 局域网放大器晶体管
页数 文件大小 规格书
3页 103K
描述
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3

2SD2158O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.92外壳连接:ISOLATED
最大集电极电流 (IC):2 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):1200
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

2SD2158O 数据手册

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