生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.8 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2155 | TOSHIBA |
获取价格 |
NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | |
2SD2155 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2155 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2155O | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 15A I(C) | TO-247VAR | |
2SD2155-O | TOSHIBA |
获取价格 |
TRANSISTOR 15 A, 180 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SD2155R | TOSHIBA |
获取价格 |
TRANSISTOR 15 A, 180 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Pow | |
2SD2155-R | TOSHIBA |
获取价格 |
TRANSISTOR 15 A, 180 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SD2156 | NAIS |
获取价格 |
SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE | |
2SD2156A | NAIS |
获取价格 |
SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE | |
2SD2156AO | NAIS |
获取价格 |
SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE |