Datasheet > 2SD1805G(TP)

2SD1805G(TP)

更新时间： 2024-09-28 14:50:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	98K
描述
TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),TO-251VAR

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技术参数
数据手册

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2SD1805G(TP) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
最大集电极电流 (IC)：	5 A	配置：	Single
最小直流电流增益 (hFE)：	280	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	15 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SD1805G(TP) 数据手册

Ordering number:EN2115B

NPN Epitaxial Planar Silicon Transistor

2SD1805

High-Current Switching Applications

Applications

Package Dimensions

unit:mm

· Strobes, voltage regulators, relay drivers, lamp

drivers.

2045B

[2SD1805]

6.5

Features

2.3

5.0

0.5

· Low saturation voltage.

· Fast switching time.

· Large current capacity.

· Small and slim package making it easy to make

2SD1805-applied sets smaller.

0.85

0.7

1.2

1 : Base

0.6

0.5

2 : Collector

3 : Emitter

4 : Collector

2.3

SANYO : TP

unit:mm

2044B

[2SD1805]

6.5

2.3

5.0

0.5

0.85

1 : Base

0.6

1.2

0~0.2

2 : Collector

3 : Emitter

4 : Collector

2.3

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22599TH (KT)/8309MO/5277KI/O236KI, TS No.2115–1/4

12 3 4

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与2SD1805G(TP)相关器件

型号	品牌	获取价格	描述	数据表
2SD1805G-E	ONSEMI	获取价格	Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA
2SD1805G-TL-E	ONSEMI	获取价格	Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA
2SD1806	SANYO	获取价格	High-Current Switching Applications
2SD1809	ROHM	获取价格	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD1809T103	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
2SD1812	ROHM	获取价格	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD1812/N	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SD1812/NP	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SD1812/NQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SD1812/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

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