Datasheet > 2SD1409_15

2SD1409_15

更新时间： 2022-02-26 13:04:18

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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2SD1409_15 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SD1409

DESCRIPTION

·With TO-220F package

·High DC current gain

·Monolithic construction with built-in base-emitter

shunt resistor

APPLICATIONS

·Igniter applications

·High volitage switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

600

Open base

400

Open collector

I_B

Base current

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

2.0

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

JMnic

12 3

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