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2SD1140_06 PDF预览

2SD1140_06

更新时间: 2024-11-27 04:26:11
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
5页 126K
描述
Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)

2SD1140_06 数据手册

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2SD1140  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)  
2SD1140  
Micro Motor Drive, Hammer Drive Applications  
Unit: mm  
Switching Applications  
Power Amplifier Applications  
High DC current gain: h  
= 4000 (min) (V  
= 2 V, I = 150 mA)  
FE  
CE C  
Low saturation voltage: V  
= 1.5 V (max) (I = 1 A, I = 1 mA)  
C B  
CE (sat)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
30  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
10  
V
I
1.5  
50  
A
C
Base current  
I
mA  
mW  
°C  
°C  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
900  
150  
C
T
j
JEDEC  
JEITA  
TO-92MOD  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-5J1A  
Weight: 0.36 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Equivalent Circuit  
COLLECTOR  
BASE  
EMITTER  
1
2006-11-21  

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