Datasheet > 2SCR514P_09

2SCR514P_09

更新时间： 2024-02-05 09:16:10

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	236K
描述
Midium Power Transistors (80V / 700mA)

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中文翻译

获取价格

数据手册

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2SCR514P_09 数据手册

Midium Power Transistors (80V / 700mA)

2SCR514P

 Structure

 Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor

 Features

1) Low saturation voltage, typically

V_{CE (sat)}= 0.3V (Max.) (I_C/ I_B= 300mA / 15mA)

(1)

(2) (3)

2) High speed switching

 Applications

Abbreviated symbol : ND

Driver

 Packaging specifications

 Inner circuit (Unit : mm)

(2)

Package

Taping

T100

Type

Code

Basic ordering unit (pieces) 1000

2SCR514P



(1)

 Absolute maximum ratings (Ta = 25C)

(1) Base

(2) Collector

(3) Emitter

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

V_CBO

V_CEO

V_EBO

I_C

(3)

0.7

Collector current

Pulsed

I_CP

P_D

T_j

1.4

0.5

C

Power dissipation

Junction temperature

150

Range of storage temperature

T_stg

-55 to 150

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

2009.12 - Rev.A

1/4

12 3 4 5

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与2SCR514P_09相关器件

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2SCR514P_10	ROHM	获取价格	Midium Power Transistors (80V / 0.7A)
2SCR514P5	ROHM	获取价格	2SCR514P5是低VCE(sat)的晶体管，适合高速开关的低频放大用途。
2SCR514P5T100	ROHM	获取价格	Small Signal Bipolar Transistor,
2SCR514PFRAT100	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SCR514PHZG	ROHM	获取价格	Small Signal Bipolar Transistor,
2SCR514PT100	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SCR514R	ROHM	获取价格	Midium Power Transistors (80V / 0.7A)
2SCR514RHZG	ROHM	获取价格	2SCR514RHZG是一款低VCE(sat)晶体管，非常适用于低频放大应用，是符合AEC
2SCR514RTL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SCR522EB	ROHM	获取价格	General purpose transistor(20V,0.2A)