Datasheet > 2SC5355

2SC5355

更新时间： 2024-09-23 07:31:11

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页数	文件大小	规格书
2页	44K
描述
Silicon NPN Triple Diffused Mesa Type

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中文翻译

获取价格

数据手册

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2SC5355 数据手册

SMD Type

Transistors

Silicon NPN Triple Diffused Mesa Type

2SC5355

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Excellent switching times: tr = 0.5 ìs (max), tf = 0.3 ìs (max)

High collector breakdown voltage: VCEO = 400 V

High DC current gain: hFE = 20 (min)

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

600

Collector-emitter voltage

Emitter-base voltage

Collector current ( DC)

Collector current (Pulse)

Base current

400

I^CP

I^B

1.5

Collector power dissipation Ta = 25

T^C= 25

Junction temperature

Storage temperature range

T^j

150

Tstg

-55 to +150

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