Datasheet > 2SC4115S-Q-AT

2SC4115S-Q-AT

更新时间： 2024-02-24 00:59:00

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描述
Transistor

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技术参数
数据手册

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2SC4115S-Q-AT 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

2SC4115S-Q-AT 数据手册

2SC4115S

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

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2SC4115S-Q

2SC4115S-R

2SC4115S-S

Micro Commercial Components

Features

NPN

•

Power dissipation: P_CM= 0.3W(T_amb=25?)

Collector current: I_CM= 3A

Plastic-Encapsulate

Transistors

Collector-base voltage: V_(BR)CBO= 40V

Operating and storage junction temperature range

T_J, T_stg: -55? to + 150?

Electrical Characteristics @ 25R Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Voltage

(I_C=-50IA, I_E=0)

Min

Typ

Max

Unit

TO-92S

V_CEO

---

Collector-Base Voltage

(I_C=-1IA, I_B=0)

V_CBO

---

Emitter-Base Voltage

(I_E=-50IA, I_C=0)

V_EBO

I_CBO

I_EBO

h_FE

6.0

---

0.1

560

0.5

---

Collector cut-off Current

(V_CB=-20V, I_E=0)

---

Emitter cut-off Current

(V_EB=-5V, I_C=0)

DC current gain

(V_CE=-2V, I_C=-0.1A)

Collector-Emitter Saturation Voltage

(I_C=-2A, I_B=-0.1A)

Transition Frequency

(V_CE=2.0Vdc, I_C=0.5Adc)

---

120

---

V_CE(sat)

f_T

200

MHz

Measured Using Pulse Current

CLASSIFICATION OF h^FE

Rank

Range

Marking

120-270

4115Q

180-390

4115R

270-560

4115S

1.EMITTER

2.COLLECTOR

3.BASE

DIMENSIONS

INCHES

MIN

DIM

MAX

---

MIN

MAX

---

NOTE

.16

.12

4.00

3.00

.59

15.00

.02

.08

.20

0.45

2.00

5.00

www.mccsemi.com

Revision: 2

2007/03/01

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