Datasheet > 2SC4026_2014

2SC4026_2014

更新时间： 2022-02-26 13:29:24

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	184K
描述
Silicon NPN Power Transistors

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2SC4026_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC4026

DESCRIPTION

·With TO-220Fa package

·High breakdown voltage

·High speed switching

·Wide area of safe operation (SOA)

APPLICATIONS

·For high breakdown voltage high-speed

switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

500

400

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

1.5

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

Junction temperature

Storage temperature

150

-55~150

℃

T_j

T_stg

12 3 4

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