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2SC3801/M PDF预览

2SC3801/M

更新时间: 2024-11-23 18:41:59
品牌 Logo 应用领域
罗姆 - ROHM 放大器晶体管
页数 文件大小 规格书
2页 105K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92

2SC3801/M 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84最大集电极电流 (IC):0.03 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):39
最高频带:ULTRA HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1100 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2SC3801/M 数据手册

 浏览型号2SC3801/M的Datasheet PDF文件第2页 

与2SC3801/M相关器件

型号 品牌 获取价格 描述 数据表
2SC3801/MN ROHM

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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3801/MP ROHM

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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3801/MQ ROHM

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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3801/N ROHM

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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3801/NQ ROHM

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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3801/P ROHM

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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3801/PQ ROHM

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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3801/Q ROHM

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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3801M ETC

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TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 30MA I(C) | TO-92
2SC3801N ROHM

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92