Datasheet > 2SC3734

2SC3734

更新时间： 2024-11-18 12:54:39

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	94K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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2SC3734 数据手册

RoHS

2 S C 3 7 3 4 L T 1

NPN EPITAXIAL SILICON TRANSISTOR

SOT-23

AM/FM IF AMPLIFIER,LOCAL OSCILATOR

OF FM/VHF TUNER

High Current Gain Bandwidth

Product fT=1100MHz

1.BASE

2.EMITTER

2.4

1.3

3.COLLECTOR

Unit:mm

(Ta=25^oC)

ABSOLUTE MAXIMUM RATINGS

Symbol

Rating

Unit

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

EBO

Emitter-Base Voltage

Collector Current

Collector Dissipation Ta=25^oC*

Junction Temperature

Storage Temperature

225

150

-55~150

^OC

stg

(Ta=25^oC)

Electrical Characteristics

Parameter

Symbol MIN. TYP.MAX. Unit

Condition

BVCBO

BVCEO

BVEBO

=100 A I

=1mA I =0

=100 A I =0

CB=12V, V =0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

CBO

EBO

CB=3V, I

CB=5V, I

300

0.5

1.7

DC Current Gain

=1mA

28 100

1.3

CE(sat)

Collector-Emitter Saturation Voltage

Collector-Base Capacitance

=10mA, I

CB=10V, I

CE=5V, I

=1mA

=10,f=1MHz

Collector-Gain-Bandwidth Product

MHz

=5mA

1100

700

*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC

WEJ ELECTRONIC CO.,LTD

^#Pulse Test: Pulse Width 300uS Duty cycle 2%

DEVICE MARKING:

2SC3734LT1=J8

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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