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2SC3734 PDF预览

2SC3734

更新时间: 2024-11-18 06:22:35
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科信 - KEXIN /
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描述
NPN Silicon Epitaxia

2SC3734 数据手册

  
SMD Type  
Transistors  
NPN Silicon Epitaxia  
2SC3734  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High speed : tstg 200ns.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
40  
V
6
V
Collector current  
200  
mA  
Total power dissipation  
at 25 ambient temperature  
Junction temperature  
Storage temperature  
PT  
200  
mW  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
Testconditons  
VCB = 30V, IE=0  
Min  
75  
Typ  
Max  
100  
100  
300  
0.3  
Unit  
nA  
ICBO  
IEBO  
hFE  
VEB = 3V, IC=0  
nA  
VCE = 1V , IC = 10mA  
200  
0.12  
0.8  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = 50mA , IB = 5mA  
VBE(sat) IC = 50mA , IB = 5mA  
V
V
0.95  
fT  
Cob  
ton  
VCE = 20V , IE = -10mA  
300  
510  
3.0  
MHz  
pF  
ns  
VCB = 5V , IE = 0 , f = 1.0MHz  
VCC = 3V ,  
4.0  
70  
Turn-on time  
Storage time  
tstg  
toff  
IC = 10mA ,  
100  
200  
250  
ns  
Turn-off time  
IB1 = -IB2 = 1mA  
ns  
*. PW 350ìs,duty cycle 2%  
hFE Classification  
Marking  
hFE  
B22  
B23  
B24  
75 150  
100 200  
150 300  
1
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