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2SC3619_06 PDF预览

2SC3619_06

更新时间: 2024-09-28 04:25:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关放大器高压PC
页数 文件大小 规格书
5页 130K
描述
Silicon NPN Triple Diffused Type (PCT Process) High-Voltage Switching and Amplifier Applications

2SC3619_06 数据手册

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2SC3619  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)  
2SC3619  
High-Voltage Switching and Amplifier Applications  
Unit: mm  
Color TV Horizontal Driver Applications  
Color TV Chroma Output Applications  
High breakdown voltage: V  
= 300 V  
CEO  
Small collector output capacitance: C = 3.0 pF (typ.)  
ob  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
300  
300  
7
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
50  
mA  
mA  
C
Base current  
I
B
Collector power dissipation  
(Ta = 25°C)  
P
1.5  
W
C
JEDEC  
JEITA  
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
j
TOSHIBA  
2-8H1A  
T
stg  
55 to 150  
Weight: 0.82 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-09  

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