生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.23 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.03 A | 基于收集器的最大容量: | 1.5 pF |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 320 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SC2776-C | HITACHI | SMALL SIGNAL TRANSISTOR |
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2SC2776VA01 | RENESAS | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 |
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2SC2776VATL | HITACHI | 暂无描述 |
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2SC2776VATL | RENESAS | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 |
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2SC2776VATR | HITACHI | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic |
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2SC2776VATR | RENESAS | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic |
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