Datasheet > 2SC2778B

2SC2778B

更新时间： 2024-09-26 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
4页	69K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| TO-236

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中文翻译

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数据手册

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2SC2778B 数据手册

Transistor

2SC2778

Silicon NPN epitaxial planer type

For high-frequency amplification

Unit: mm

2.8 ⁺^–0⁰^.^.³²

0.65±0.15

1.5 –⁺0⁰.^.0²5⁵

0.65±0.15

Features

■

●

Optimum for RF amplification, oscillation, mixing, and IF of FM/

AM radios.

●

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

0.1 to 0.3

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

0.4±0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

JEDEC:TO–236

EIAJ:SC–59

Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

200

T_j

150

Marking symbol : K

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Transition frequency

I_C= 10µA, I_E= 0

_C= 2mA, I_B= 0

V_CEO

V_EBO

I_E= 10µA, I_C= 0

h_FE

V_CE= 10V, I_C= 1mA

250

f_T

V_CB= 10V, I_E= –1mA, f = 200MHz

V_CE= 10V, I_C= 1mA, f = 10.7MHz

150

230

1.3

MHz

Common emitter reverse transfer capacitance C_re

^*h_FERank classification

Rank

h_FE

70 ~ 160

110 ~ 250

Marking Symbol

12 3 4

中文翻译

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与2SC2778B相关器件

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2SC2780	TYSEMI	获取价格	High Collector-emitter voltage. Complements to PNP type 2SA1173
2SC2780-AZ	NEC	获取价格	暂无描述
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2SC2780-L	KEXIN	获取价格	NPN Transistors