2SC2734

更新时间： 2024-01-01 21:03:48

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
10页	52K
描述
Silicon NPN Epitaxial

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数据手册

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2SC2734 数据手册

2SC2734

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V_(BR)CBO

—

I_C= 10 µA, I_E= 0

Collector to emitter breakdown V_(BR)CEO

voltage

—

I_C= 1 mA, R_BE= ∞

I_E= 10 µA, I_C= 0

Emitter to base breakdown

voltage

V_(BR)EBO

Collector cutoff current

I_CBO

—

0.5

0.7

µA

V_CB= 10 V, I_E= 0

Collector to emitter saturation V_CE(sat)

voltage

I_C= 10 mA, I_B= 5 mA

DC current transfer ratio

Gain bandwidth product

Collector output capacitance

Conversion gain

h_FE

f_T

1.4

—

200

—

V_CE= 10 V, I_C= 5 mA

3.5

0.9

GHz

V_CE= 10 V, I_C= 10 mA

V_CB= 10 V, I_E= 0, f = 1 MHz

Cob

1.5

—

V_CC= 6 V, I_C= 2 mA,

f = 900 MHz,

_OSC= 930 MHz (0dBm),

_out= 30 MHz

Noise figure

—

V_CC= 6 V, I_C= 2 mA,

f = 900 MHz,

_OSC= 930 MHz (0dBm),

_out= 30 MHz

Oscillating output voltage

Note: Marking is “GC”.

V_OSC

140

V_CC= 6 V, I_C= 5 mA,

f = 930 MHz

123 4 5 6 7...10

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