Datasheet > 2SC2734-3

2SC2734-3

更新时间： 2022-02-26 12:20:24

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1081K
描述
NPN Transistors

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2SC2734-3 数据手册

SMD Type

Transistors

NPN Transistors

2SC2734

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Collector Current Capability IC=50mA

● Collector Emitter Voltage V^CEO=11V

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， RBE =∞

= 100μA， I = 0

CB= 20 V , I = 0

^EB= 3V , I =0

E= 0

CBO

EBO

0.5

0.1

0.7

1.2

200

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=10 mA, I

B=5mA

=10 mA, I

B=5mA

hFE

CE= 10V, I

C= 5mA

CC = 6 V, I

= 2 mA, f=900 MHz,

Conversion gain

Noise figure

OSC = 930 MHz (0dBm), fout = 30 MHz

CC = 6 V, I

C = 2 mA, f=900 MHz,

OSC = 930 MHz (0dBm), fout = 30 MHz

Oscillating output voltage

Collector output capacitance

Transition frequency

OSC

^CC= 6 V, I

= 5 mA,f = 930 MHz

140

CB= 10V, I

CE= 10V, I

= 0,f=1MHz

1.5

= 10mA

1.4

3.5

GHz

■ Classification of hfe

Type

Range

Marking

2SC2734-GC

2SC2734-R25

100-200

20-200

R25.

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