Datasheet > 2SC2714

2SC2714

更新时间： 2024-01-09 09:55:46

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
3页	472K
描述
TRANSISTOR(NPN)

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中文翻译

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技术参数
数据手册

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2SC2714 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.69	Base Number Matches：	1

2SC2714 数据手册

2SC2714

TRANSISTOR (NPN)

SOT-23

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Small reverse Transfer Capacitance:Cre=0.7pF(typ.)

Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

℃

P_C

100

125

-55-+125

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBOI_C=10μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=10μA,I_C=0

I_CBO

I_EBO

h_FE

f_T

V_CB=18V,I_E=0

0.5

μA

V_EB=4V,I_C=0

DC current gain

V_CE=6V,I_C=1mA

200

Transition frequency

V_CE=6V,I_C=1mA

550

0.7

2.5

MHz

Reverse Transfer capacitance

Noise figure

C_re

V_CB=6V,I_E=0,f=1MHz

V_CE=6V,I_c=1mA,f=100MHZ

CLASSIFICATION OF h_FE

Rank

40-80

70-140

100-200

Range

Marking

JinYu

semiconductor

www.htsemi.com

12 3

中文翻译

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