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2SC2714-O

更新时间： 2024-02-28 23:28:41
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
8页 548K
描述
High Frequency Amplifier Applications

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中文翻译

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2SC2714-O 技术参数

生命周期：Contact ManufacturerReach Compliance Code：compliant
风险等级：5.69Base Number Matches：1

2SC2714-O 数据手册

 浏览型号2SC2714-O的Datasheet PDF文件第2页浏览型号2SC2714-O的Datasheet PDF文件第3页浏览型号2SC2714-O的Datasheet PDF文件第4页浏览型号2SC2714-O的Datasheet PDF文件第5页浏览型号2SC2714-O的Datasheet PDF文件第6页浏览型号2SC2714-O的Datasheet PDF文件第7页 
2SC2714  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)  
2SC2714  
High Frequency Amplifier Applications  
FM, RF, MIX, IF Amplifier Applications  
Unit: mm  
•
•
Small reverse transfer capacitance: C = 0.7 pF (typ.)  
re  
Low noise figure: NF = 2.5dB (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
30  
4
V
I
20  
4
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
S-MINI  
T
j
125  
JEDEC  
JEITA  
TO-236  
T
stg  
−55 to 125  
SC-59  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
TOSHIBA  
2-3F1A  
Weight: 12 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 40 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.5  
0.5  
μA  
μA  
CBO  
CB  
EB  
E
I
= 4 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= 6 V, I = 1 mA  
40  
⎯
200  
⎯
CE  
C
Reverse transfer capacitance  
Transition frequency  
Collector-base time constant  
Noise figure  
C
V
V
V
= 6 V, f = 1 MHz  
⎯
⎯
⎯
⎯
17  
0.70  
550  
⎯
⎯
⎯
pF  
MHz  
ps  
re  
CB  
CE  
CB  
f
T
= 6 V, I = 1 mA  
C
C
rbb’  
= 6 V, I = −1 mA, f = 30 MHz  
30  
5.0  
⎯
c
E
･
NF  
2.5  
23  
dB  
V
= 6 V, I = −1 mA, f = 100 MHz,  
E
CC  
Figure 1  
Power gain  
G
dB  
pe  
Note: h classification R: 40 to 80, O: 70 to 140, Y: 100 to 200  
FE  
1
2010-08-24  
12345678

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