生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.06 |
最大集电极电流 (IC): | 0.02 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
最高频带: | VERY HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 940 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2620QB | HITACHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN | |
2SC2620QB | RENESAS |
获取价格 |
Si, NPN, RF SMALL SIGNAL TRANSISTOR | |
2SC2620QBTL | HITACHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC2620QBTL-E | RENESAS |
获取价格 |
Silicon NPN Epitaxial Planar | |
2SC2620QBTR | HITACHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC2620QBTR | RENESAS |
获取价格 |
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 | |
2SC2620QBTR-E | RENESAS |
获取价格 |
暂无描述 | |
2SC2620QBUL | RENESAS |
获取价格 |
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 | |
2SC2620QBUL | HITACHI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silic | |
2SC2620QC | RENESAS |
获取价格 |
Si, NPN, RF SMALL SIGNAL TRANSISTOR |