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2SC2590_2014 PDF预览

2SC2590_2014

更新时间: 2024-10-01 01:17:55
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
4页 187K
描述
Silicon NPN Power Transistors

2SC2590_2014 数据手册

 浏览型号2SC2590_2014的Datasheet PDF文件第2页浏览型号2SC2590_2014的Datasheet PDF文件第3页浏览型号2SC2590_2014的Datasheet PDF文件第4页 
JMnic  
Product Specification  
Silicon NPN Power Transistors  
2SC2590  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2SA1110  
·Excellent current IC characteristics of forward  
current transfer ratio hFE vs. collector  
·High transition frequency fT  
·Optimum for the driver stage of a  
40 W to 60 W output amplifier  
APPLICATIONS  
·For low-frequency power amplification  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute Maximun Ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
120  
UNIT  
V
Open base  
120  
V
Open collector  
5
V
Collector current (DC)  
Collector current-Peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
0.5  
A
ICM  
1.0  
A
PC  
TC=25  
1.2*  
150  
W
Tj  
Tstg  
-55~150  
Note) *: Without heat sink  

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