Datasheet > 2SC2570A-E-A

2SC2570A-E-A

更新时间： 2024-09-27 21:16:03

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	133K
描述
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92, SC-43B, 3 PIN

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2SC2570A-E-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC2570A

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

DESCRIPTION

The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges.

FEATURES

•

Low noise and high gain : NF = 1.5 dB TYP., G^a= 8 dB TYP. @ V^CE= 10 V, I^C= 5 mA, f = 1 GHz

Wide dynamic range : NF = 1.9 dB TYP., G^a= 9 dB TYP. @ V^CE= 10 V, I^C= 15 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC2570A

500 pcs (Non reel)

• 18 mm wide radial taping

• Supplying paper tape with in a box

2SC2570A-T

2.5 kpcs/box (Box type)

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 500 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

°C

tot ^Note

600

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10207EJ01V0DS (1st edition)

(Previous No. P10404EJ3V0DS00)

The mark • shows major revised points.

Date Published April 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 1980, 2003

12 3 4 5 6 7 8

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