Datasheet > 2SC2578_2014

2SC2578_2014

更新时间： 2024-02-01 21:00:05

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC2578_2014 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SC2578

DESCRIPTION

·With TO-3PN package

·Complementary to 2SA1104

·High Power Dissipation

·High Current Capability

APPLICATIONS

·Audio power amplifier

·DC TO DC Converter

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

140

100

UNIT

Open base

Open collector

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

JMnic

12 3

中文翻译

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2SC2578O	NJSEMI	获取价格	Power Bipolar Transistor, 7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC2578P	NJSEMI	获取价格	Power Bipolar Transistor, 7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC2578Y	NJSEMI	获取价格	Power Bipolar Transistor, 7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
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