Datasheet > 2SC2570A(NE02132)

2SC2570A(NE02132)

更新时间： 2024-01-01 18:37:19

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Discrete

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2SC2570A(NE02132) 数据手册

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DATA SHEET

NPN SILICON TRANSISTOR

2SC2570A

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.

FEATURES

•

Low noise and high gain

Wide dynamic range

: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, V^CE= 10 V, I^C= 5.0 mA

: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, V^CE= 10 V, I^C= 15 mA

ORDERING INFORMATION

Part Number

Quantity

2SC2570A

Loose products (500 pcs)

2SC2570A-T

Taping products (Box type) (2 500 pcs)

Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).

ABSOLUTE MAXIMUM RATINGS (T^A= +25 °C)

Parameter

Collector to Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

3.0

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

P^tot

600

T^j

150

T^stg

–65 to +150

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P10404EJ3V0DS00 (3rd edition)

Date Published November 1999 N CP(K)

Printed in Japan

1980, 1999

12 3 4 5 6 7 8

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