Datasheet > 2SC2383-B

2SC2383-B

更新时间： 2024-01-27 17:32:38

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	73K
描述
Transistor

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技术参数
数据手册

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2SC2383-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

2SC2383-B 数据手册

2SC2383

2SC2383-R

2SC2383-O

2SC2383-Y

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN Silicon

Plastic-Encapsulate

Transistor

•

Capable of 0.9Watts of Power Dissipation.

Collector-current 1.0A

•

Collector-base Voltage 160V

Operating and storage junction temperature range: -55^OC to +150^OC

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Marking: C2383

TO-92MOD

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

Collector-Emitter Breakdown Voltage

160

6.0

Vdc

(I =10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I =100uAdc, I_E=0)

Emitter-Base Voltage

(I =10uAdc, I =0)

Vdc

Collector Cutoff Current

(V_CB=150Vdc, I_E=0)

1.0

uAdc

CBO

Collector Cutoff Current

(V_CB=150Vdc, R_EB=10m OHM)

CER

I_EBO

Emitter Cutoff Current

(V_EB=6.0Vdc, I_C=0)

1.0

ON CHARACTERISTICS

h_FE(1)

V_CE(sat)

V_BE

DC Current Gain

(I =200mAdc, V_CE=5.0Vdc)

320

1.0

Collector-Emitter Saturation Voltage

(I =500mAdc, I =50mAdc)

1.E

2.C

3.B

Vdc

Base-Emitter Voltage

(I =5.0mAdc, V_CE=5.0Vdc)

0.75

DIMENSIONS

SMALL-SIGNAL CHARACTERISTICS

INCHES

MIN

f_T

Transistor Frequency

DIM

MIN

---

MAX

.030

.039

.031

.024

.201

MAX

.750

1.00

.80

NOTE

(I =200mAdc, V_CE=5.0Vdc )

MHz

---

0.60

5.10

---

.050

.100

.039

1.27

2.54

1.00

---

.087

.024

.323

.413

.161

---

2.20

.60

8.20

10.50

4.10

FE (1)

CLASSIFICATION OF H

Rank

Range

60-120

100-200

160-320

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Revision: 4

2007/03/01

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