Datasheet > 2SC1213

2SC1213

更新时间： 2024-01-02 08:30:43

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	73K
描述
NPN Silicon General Purpose Transistor

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中文翻译

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技术参数
数据手册

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2SC1213 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SC1213 数据手册

2SC1213 & 2SC1213A

NPN Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

FEATURE

TO-92

Low frequency amplifier

Power dissipation

P_CM:

0.4 W (Tamb=25℃)

Collector current

I_CM:

Collector-base voltage

V_(BR)CBO2SC1213

2SC1213A :

0.5

1. Emitter

2. Collector

3. Base

Operating and storage junction temperature range

T_J, T_stg:

-55℃ to +150℃

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

2SC1213

V(BR)_CBO

Ic= 10µA , I_E=0

2SC1213A

Collector-emitter breakdown voltage 2SC1213

V(BR)_CEO

I_C= 1 mA , I_B=0

2SC1213A

V(BR)_EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

I_E=10µA, I_C=0

V_CB= 20V , I_E=0

V_CE=3V, I_C= 10mA

V_CE=3V, I_C= 500mA

0.5

µA

h_FE(1)

320

DC current gain

h_FE(2)

V_CE(sat)

V_BE

I_C= 150mA, I_B= 15 mA

V_CE= 3V, I_C= 10 mA

0.2

0.6

Collector-emitter saturation voltage

Base-emitter voltage

0.75

CLASSIFICATION OF h_FE(1)

Rank

60-120

100-200

160-320

Range

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

中文翻译

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2SC1213_11	SECOS	获取价格	General Purpose Transistor
2SC1213\|2SC1213A	ETC	获取价格
2SC1213A	HITACHI	获取价格	Silicon NPN Epitaxial
2SC1213A	MICRO-ELECTRONICS	获取价格	SILICON TRANSISTOR
2SC1213A	SECOS	获取价格	NPN Silicon General Purpose Transistor
2SC1213A	TRSYS	获取价格	Plastic-Encapsulated Transistors
2SC1213A	RENESAS	获取价格	Silicon NPN Epitaxial
2SC1213A	WINNERJOIN	获取价格	TRANSISTOR (NPN)
2SC1213A	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1213A	CJ	获取价格	TO-92