Datasheet > 2SC1213_11

2SC1213_11

更新时间： 2024-09-30 07:30:23

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	281K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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2SC1213_11 数据手册

2SC1213, 2SC1213A

NPN

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

TO-92

ꢀ

Low frequency amplifier

Complementary pair with 2SA673 and 2SA673A

ꢀ

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE(1)

Product-Rank

Product-Rank 2SC1213A-B 2SC1213A-C 2SC1213A-D

Range 60~120 100~200 160~320

2SC1213-B

2SC1213-C

2SC1213-D

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

2SC1213

2SC1213A

2SC1213

2SC1213A

Collector to Base Voltage

V_CBO

Collector to Emitter Voltage

V_CEO

Emitter to Base Voltage

V_EBO

I_C

500

°C

Continuous Collector Current

Collector Power Dissipation

Junction, Storage Temperature

P_C

400

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown 2SC1213

V_(BR)CBO

I_C=10µA, I_E=0

Voltage

2SC1213A

2SC1213

Collector to Emitter

Breakdown Voltage

V_(BR)CEO

I_C=1mA, I_B=0

2SC1213A

Emitter to Base Breakdown Voltage

Collector Cut - Off Current

V_(BR)EBO

I_CBO

I_E=10µA, I_C=0

0.5

320

µA

V_CB=20V, I_E=0

h_{FE (1)}

h_{FE (2)}

V_CE(sat)

V_CE=3V, I_C=10mA

V_CE=3V, I_C=500mA

I_C=150mA, I_B=15mA

DC Current Gain

Collector to Emitter Saturation Voltage

0.6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2011 Rev. D

Page 1 of 2

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