Power Transistors
2SB0946 (2SB946)
Silicon PNP epitaxial planar type
Unit: mm
For power switching
10.0 0.ꢀ
5.5 0.ꢀ
4.ꢀ 0.ꢀ
ꢀ.7 0.ꢀ
Complementary to 2SD1271
φ ꢁ.1 0.1
I Features
•
•
•
•
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of forward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with one
screw
1.ꢁ 0.ꢀ
1.4 0.1
+0.ꢀ
–0.1
0.5
0.8 0.1
ꢀ.54 0.ꢁ
5.08 0.5
I Absolute Maximum Ratings TC = 25°C
1 : Base
2 : Collector
3 : Emitter
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
1
ꢀ ꢁ
−130
EIAJ : SC-67
TO-220F Package
−80
V
−7
V
−15
A
IC
−7
A
TC = 25°C
Ta = 25°C
PC
40
W
Collector power
dissipation
2
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
I Electrical Characteristics TC = 25°C
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Conditions
Min
Typ
Max
−10
−50
Unit
µA
µA
V
VCB = −100 V, IE = 0
IEBO
VEB = −5 V, IC = 0
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE1
IC = −10 mA, IB = 0
−80
45
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −3 A
*
hFE2
90
260
− 0.5
−1.5
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
VCE(sat)
VBE(sat)
fT
IC = −5 A, IB = − 0.25 A
IC = −5 A, IB = − 0.25 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
IC = −3 A, IB1 = − 0.3 A, IB2 = 0.3 A
V
V
30
0.5
1.5
0.1
MHz
µs
ton
Storage time
tstg
µs
Fall time
tf
µs
Note) : Rank classification
*
Rank
Q
P
hFE2
90 to 180
130 to 260
Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
Note.) The Part number in the Parenthesis shows conventional part number.
1