Datasheet > 2SB939P

2SB939P

更新时间： 2024-11-20 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	75K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 8A I(C) \| TO-262VAR

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中文翻译

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数据手册

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2SB939P 数据手册

Power Transistors

2SB0939, 2SB0939A (2SB939, 2SB939A)

Silicon PNP epitaxial planar type Darlington

Unit: mm

3.4±0.3

For midium-speed power switching

8.5±0.2

6.0±0.5

1.0±0.1

Complementary to 2SD1262 and 2SD1262A

Features

High foward current transfer ratio h_FE

■

●

1.5max.

1.1max.

0.5max.

●

High-speed switching

N type package enabling direct soldering of the radiating fin to

●

0.8±0.1

the printed circuit board, etc. of small electronic equipment.

2.54±0.3

Absolute Maximum Ratings (T =25˚C)

5.08±0.5

■

1:Base

2:Collector

3:Emitter

Parameter

Symbol

Ratings

–60

Unit

N Type Package

Collector to

2SB0939

2SB0939A

2SB0939

V_CBO

Unit: mm

base voltage

Collector to

–80

8.5±0.2

6.0±0.3

3.4±0.3

–60

1.0±0.1

V_CEO

emitter voltage 2SB0939A

Emitter to base voltage

Peak collector current

Collector current

–80

V_EBO

I_CP

–7

–12

I_C

–8

R0.5

Collector power T_C=25°C

0.8±0.1

0 to 0.4

P_C

2.54±0.3

1.1 max.

dissipation

Ta=25°C

1.3

5.08±0.5

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CBO

Conditions

min

typ

max

–100

–2

Unit

µA

2SB0939

V_CB= –60V, I_E= 0

current

2SB0939A

V_CB= –80V, I_E= 0

V_EB= –7V, I_C= 0

Emitter cutoff current

I_EBO

Collector to emitter 2SB0939

voltage 2SB0939A

–60

–80

V_CEO

I_C= –30mA, I_B= 0

h_FE1

V_CE= –3V, I_C= –4A

2000

500

10000

Forward current transfer ratio

h_FE2

V_CE= –3V, I_C= –8A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –4A, I_B= –8mA

–1.5

–2

I_C= –4A, I_B= –8mA

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= –10V, I_C= – 0.5A, f = 1MHz

0.5

MHz

µs

I_C= –4A, I_B1= –8mA, I_B2= 8mA,

V_CC= –50V

µs

Internal Connection

^*h_FE1Rank classification

Rank

h_FE1

2000 to 5000 4000 to 10000

Note) The part numbers in the parenthesis

show conventional part number.

12 3 4

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