Datasheet > 2SB772SE(TO-92)

2SB772SE(TO-92)

更新时间： 2024-11-25 21:17:07

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
2页	76K
描述
Transistor

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技术参数
数据手册

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2SB772SE(TO-92) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	200
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.5 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SB772SE(TO-92) 数据手册

UTC2SB772S

PNPEPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE

TRANSISTOR

DESCRIPTION

The UTC 2SB772S is

a medium power low voltage

transistor, designed for audio power amplifier, DC-DC

converter and voltage regulator.

FEATURES

*High current output up to 3A

*Low saturation voltage

*Complement to 2SD882S

TO-92

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified )}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

-40

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation (Ta=25°C)

Collector Current (DC)

Collector Current (PULSE)

Base Current

-30

-5

0.5

-3

-7

-0.6

Junction Temperature

Storage Temperature

TSTG

150

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain(note 1)

SYMBOL

TEST CONDITIONS

VCB=-30V,IE=0

MIN TYP MAX UNIT

ICBO

IEBO

hFE1

hFE2

-1000

VEB=-3V,Ic=0

VCE=-2V,Ic=-20mA

VCE=-2V,Ic=-1A

100

200

150

-0.3

-1.0

400

-0.5

-2.0

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE(sat)

Ic=-2A,IB=-0.2A

VCE=-5V,Ic=-0.1A

VCB=-10V,IE=0,f=1MHz

MHz

Cob

Note 1:Pulse test: PW<300µs, Duty Cycle<2%

CLASSIFICATION OF hFE2

RANK

RANGE

100-200

160-320

200-400

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R201-023,A

中文翻译

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