2SB1565

更新时间： 2024-02-08 09:49:50

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	121K
描述
Silicon PNP Power Transistors

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技术参数
数据手册

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2SB1565 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Is Samacsys：	N	Base Number Matches：	1

2SB1565 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1565

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

V_CEsat

V_BEsat

I_CBO

PARAMETER

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector cut-off current

CONDITIONS

MIN

-60

-80

-7

TYP.

MAX

UNIT

I_C=-1mA ;I_B=0

I_C=-50μA ;I_E=0

I_E=-50μA ;I_C=0

I_C=-2A ;I_B=-0.2A

V_CB=-60V; I_E=0

-1.5

-10

μA

I_EBO

Emitter cut-off current

V_EB=-7V; I_C=0

-10

h_FE

DC current gain

I_C=-0.5A ; V_CE=-5V

I_E=0 ; V_CB=-10V;f=1MHz

I_C=-0.5A ; V_CE=-5V

100

320

C_OB

Output capacitance

f_T

Transition frequency

MHz

h_FEClassifications

100-200

160-320

123

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