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2SB1565/F PDF预览

2SB1565/F

更新时间： 2023-01-03 09:09:13

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
1页	51K
描述
3A, 60V, PNP, Si, POWER TRANSISTOR, TO-220FN, TO-220FN, 3 PIN

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2SB1565/F 数据手册

2SB1565

Transistors

Power Transistor (−60V, −3A)

2SB1565

!Features

!External dimensions (Units : mm)

CE(sat)

C B

1) Low V

. (Typ.−0.3V at I /I = −2/−0.2A)

2) Excellent DC current gain characteristics.

3) Wide SOA (safe operating area).

10.0

4.5

2.8

3.2

φ

1.2

1.3

0.8

0.75

( )

(1) Base Gate

2.54

2.54

)

2.6

(

) (

)

(

2

3

1

(

)

)

(2) Collector Drain

(

(

) ( ) (

)

2

3

1

(3) Emitter Source

ROHM : TO-220FN

!Absolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Limits

−80

−60

−7

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

V

V

V

A (DC)

A (Pulse)

W

I

C

−3

−6

Collector current

I

CP

*

2

Collector power dissipation

P

C

25

W (Tc = 25°C)

°C

Junction temperature

Storage temperature

Tj

Tstg

150

−55~+150

°C

*

Single pulse Pw = 100ms

!Packaging specifications and h^FE

Type

2SB1565

TO-220FN

Package

hFE

EF

Code

−

Basic ordering unit (pieces)

500

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BVCBO

BVCEO

BVEBO

−80

−60

−7

−

−

−

−

100

−

−

−

−

−

−

−

−

−

15

−

−

−

−10

−10

−1.5

−1.5

320

−

V

V

I

I

I

C

C

= −50µA

= −1mA

V

E

= −50µA

CB = −60V

EB = −7V

µA

µA

V

V

V

I

CBO

Emitter cutoff current

I

EBO

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

I

I

C

/I

B

= −2A/−0.2A

= −2A/−0.2A

= −5V/−0.5A

CE = −5V , I = 0.5A , f = 5MHz

CB = −10V , I = 0A , f = 1MHz

V

CE(sat)

BE(sat)

*

*

V

C/I

B

V

hFE

−

MHz

V

V

V

CE/IC

Transition frequency

f

T

E

*

Output capacitance

Cob

−

50

−

pF

E

*

Measured using pulse current.

1

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