Datasheet > 2SB1115A

2SB1115A

更新时间： 2024-09-29 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	51K
描述
PNP Silicon Epitaxial Transistor

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中文翻译

获取价格

数据手册

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2SB1115A 数据手册

SMD Type

Transistors

PNP Silicon Epitaxial Transistor

2SB1115A

Features

World standard miniature package.

Low VCE(sat): VCE(sat)=-0.2V at 1A

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-80

-60

-6

-1

Collector current (pulse) *

Total power dissipation

Junction temperature

I^C

-2

P^T

T^j

150

Storage temperature range

Tstg

-55 to +150

* Pulsed: PW

10 ms, duty cycle

50%

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

Testconditons

Min

Typ

Max

-100

400

Unit

VCB = -80 V, IE = 0

I^EBO

VEB = -6.0 V, IC = 0

V^CE= -2.0 V, IC = -100 mA

V^CE= -2.0 V, IC = -1.0A

135

100

340

200

-0.2

-0.9

DC current gain *

h^FE

Collector saturation voltage *

Base saturation voltage *

Base-emitter voltage *

Gain bandwidth product

Output capacitance

V^CE(sat)IC = -1.0A, IB = -50 mA

V^BE(sat)IC = -1.0A, IB = -50 mA

-0.3

-1.2

-700

V^BE

f^T

VCE = -2.0 V, IC = -50 mA

VCE = -2.0 V, IE = -100 mA

-600

120

MHz

C^ob

VCB = -10 V, IE = 0 , f = 1.0 MHz

* Pulsed: PW

350 ìs, duty cycle

hFE Classification

Marking

h^FE

135 270

200 400

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