是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.69 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 135 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1115AYQ-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,60V V(BR)CEO,1A I(C),SOT-89 | |
2SB1115AYQ-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MI | |
2SB1115AYQ-T1 | RENESAS |
获取价格 |
1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN | |
2SB1115AYQ-T1-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,60V V(BR)CEO,1A I(C),SOT-89 | |
2SB1115AYQ-T1-AZ | RENESAS |
获取价格 |
1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN | |
2SB1115AYQ-T2 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MI | |
2SB1115AYQ-T2-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,60V V(BR)CEO,1A I(C),SOT-89 | |
2SB1115AYQ-T2-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, MI | |
2SB1115-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1115-HF_15 | KEXIN |
获取价格 |
PNP Transistors |