SMD Type
Transistors
PNP Transistors
2SB1115A-HF
■ Features
1.70 0.1
● Low VCE(sat) VCE(sat)=-0.2V at 1A
● Complementary to 2SD1615A-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
-80
-60
-6
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
I
C
-1
A
Collector current -Pulse
(Note.1)
I
CP
-2
Collector Power Dissipation
P
C
2
W
℃
Junction Temperature
T
J
150
Storage Temperature range
T
stg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-80
-60
-6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
Ic= -1 mA, I =0
= -100μA, I =0
CB= -80V , I =0
EB= -6V , I =0
E=0
B
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.3
-1.2
-0.7
400
uA
V
Emitter cut-off current
I
C
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Base - emitter voltage (Note.1)
V
CE(sat)
BE(sat)
I
I
C
=-1 A, I
B
=-50mA
=-50mA
-0.2
-0.9
V
C
=-1 A, I
B
V
BE
V
V
V
V
V
CE= -2V, I
CE= -2V, I
CE= -2V, I
C= -50 mA
C= -100 mA
C= -1 A
-0.6
135
100
340
200
25
DC current gain
(Note.1)
hFE
Collector output capacitance
Transition frequency
C
ob
T
CB = –10V, I
E
= 0, f = 1MHz
pF
f
CE= -2V, I = -100mA
C
80
120
MHz
Note.1: Pulse: PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
Type
Range
Marking
2SB1115A-Q-HF 2SB1115A-P-HF
135-270 200-400
YQ YP
F
F
1
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