Datasheet > 2SB1115A-P

2SB1115A-P

更新时间： 2024-09-30 01:14:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1238K
描述
PNP Transistors

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数据手册

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2SB1115A-P 数据手册

SMD Type

Transistors

PNP Transistors

2SB1115A

■ Features

1.70 0.1

● Low VCE(sat) VCE(sat)=-0.2V at 1A

● Complementary to 2SD1615A

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-80

-60

-6

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

-1

Collector current -Pulse

Collector Power Dissipation

Junction Temperature

(Note.1)

-2

℃

150

Storage Temperature range

stg

-55 to 150

Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-80

-60

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I =0

CB= -80V , I =0

^EB= -6V , I =0

E=0

CBO

EBO

-0.1

-0.3

-1.2

-0.7

400

Emitter cut-off current

Collector-emitter saturation voltage (Note.1)

Base - emitter saturation voltage (Note.1)

Base - emitter voltage (Note.1)

CE(sat)

BE(sat)

=-1 A, I

=-50mA

-0.2

-0.9

=-1 A, I

^CE= -2V, I

CE= -2V, I

C= -50 mA

C= -100 mA

C= -1 A

-0.6

135

100

340

200

DC current gain

(Note.1)

hFE

Collector output capacitance

Transition frequency

CB = –10V, I

= 0, f = 1MHz

^CE= -2V, I = -100mA

120

MHz

Note.1: Pulse: PW ≤ 350us,Duty Cycle ≤ 2℅

■ Classification of hfe(1)

Type

Range

Marking

2SB1115A-Q

135-270

2SB1115A-P

200-400

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